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thick-oxide metal gate MOS circuit

См. также в других словарях:

  • MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

  • transistor — /tran zis teuhr/, n. 1. Electronics. a semiconductor device that amplifies, oscillates, or switches the flow of current between two terminals by varying the current or voltage between one of the terminals and a third: although much smaller in… …   Universalium

  • Antenna effect — The antenna effect, more formally plasma induced gate oxide damage, is an effect that can potentially cause yield and reliability problems during the manufacture of MOS integrated circuits [ T. Watanabe, Y. Yoshida, “Dielectric Breakdown of Gate… …   Wikipedia

  • Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol …   Wikipedia

  • Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed …   Wikipedia

  • Carbon nanotube — Not to be confused with Carbon fiber. Part of a series of articles on Nanomaterials Fullerenes …   Wikipedia

  • Power semiconductor device — Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronic circuits (switch mode power supplies for example). They are also called power devices or when used in integrated circuits, called power… …   Wikipedia

  • Intel — For other uses, see Intel (disambiguation). Coordinates: 37°23′16.54″N 121°57′48.74″W / 37.3879278°N 121.9635389°W / 37.3879278; 121.9 …   Wikipedia

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